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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE2955T/D
Complementary Silicon Plastic Power Transistors
. . . designed for use in general-purpose amplifier and switching applications.
MJE2955T * NPN MJE3055T *
*Motorola Preferred Device
PNP
IC, COLLECTOR CURRENT (AMP)
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MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current 5.0 10 6.0 75 Total Power Dissipation @ TC = 25_C Derate above 25_C MJE3055T, MJE2955T Operating and Storage Junction Temperature Range PD Watts W/_C 0.6 TJ, Tstg - 55 to + 150
* DC Current Gain Specified to 10 Amperes * High Current Gain -- Bandwidth Product -- fT = 2.0 MHz (Min) @ IC = 500 mAdc
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol JC
Max
Unit
CASE 221A-06 TO-220AB
Thermal Resistance, Junction to Case
1.67
_C/W
Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10 7.0 5.0 dc 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0
5.0 ms
1.0 ms
100 s
TJ = 150C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25C (D = 0.1) 20 30 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 60
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J(pk) = 150_C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN415A)
v
Figure 1. Active-Region Safe Operating Area
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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MJE2955T MJE3055T
(1) Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
OFF CHARACTERISTICS
Current-Gain-Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
Base-Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (1) (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc)
DC Current Gain (1) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150_C)
Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)
2
hFE, DC CURRENT GAIN 300 200 500
v 300 s, Duty Cycle v 20%.
Characteristic
VCE = 2.0 V
PD, POWER DISSIPATION (WATTS)
100
5.0 0.01
0.4
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
0.8
1.2
1.6
2.0
30 20
50
10
0 0.1
VBE(sat) @ IC/IB = 10
TJ = 25C
0.02
VCE(sat) @ IC/IB = 10
0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)
TJ = 150C
VBE @ VCE = 3.0 V
0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
25C
- 55C
MJE2955T
5.0
Figure 4. "On" Voltages
5.0 10 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 40 50 60 70 80 90 10 20 30 0 0 0.1 0 VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 TJ = 25C 25 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) VBE @ VCE = 2.0 V VCEO(sus) ICEO VCE(sat) VBE(on) Symbol MJE3055T MJE2955T
Motorola Bipolar Power Transistor Device Data Figure 3. Power Derating
ICBO IEBO ICEX 125 50 75 100 TC, CASE TEMPERATURE (C) hFE fT
MJE3055T
Min
2.0
20 5.0
60
--
-- --
--
-- --
-- --
--
Max
100 --
700
1.8
1.1 8.0
5.0
1.0 10
1.0 5.0
--
--
5.0 150 MHz Unit Vdc Vdc Vdc --
mAdc
mAdc
mAdc
Adc
175
10
MJE2955T MJE3055T
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
MJE2955T MJE3055T
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Bipolar Power Transistor Device Data
*MJE2955T/D*
MJE2955T/D


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